We pursue the development and application of atomic layer processing (ALP) techniques, such as atomic layer deposition (ALD), atomic layer etching (ALE), and vapor-phase infiltration (VPI)/ sequential infiltration synthesis (SIS), towards the materials innovation in next-generation micro & nanoelectronics and energy technologies such as catalysis and membranes.
Combining polymer nanopatterning based on conventional lithography and block copolymer self-assembly, we generate unique organic-inorganic hybrids and inorganic nanostructures with various functional applications
Our experimental strength in ALP techniques is combined with our longstanding expertise in advanced materials characterization and semiconductor device physics & fabrication. Research topics include:
- Application of ALP including ALD, ALE, and VPI for next-generation microelectronics: a. Novel memristors for neuromorphic computing applications; b. Organic-inorganic hybrid photoresists for EUV and beyond EUV (BEUV) lithography; c. next-generation materials integration (2D, metal interconnect, dielectrics).
- Hybrid polymer nanocomposite with unique material functionalities: VPI synthesis of organic-inorganic hybrid nanocomposite thin film with enhanced materials properties for: a. Gas/liquid/ion separation/exchange membranes; b. Enhanced mechanical properties for MEMS/NEMS applications
- Self-assembled metal oxide nanostructures: Combining block copolymer self-assembly, including directed self-assembly (DSA), and SIS to generate semiconductor nanostructures for electronic and sensing applications
- Efficient heterogeneous oxidation catalysts: Development of ALD methodologies for the synthesis of efficient heterogeneous oxidation catalysts for fuel cells, exhaust after-treatment devices, and chemical sensors.
- Fundamentals in oxide, organic/hybrid, and 2D semiconductors: Development and investigation of new device concepts and fundamental properties in oxide, organic/hybrid, and 2D semiconductors, including: a. Charge transport properties; b. Device physics and structure-property correlations; c. Materials and device co-design with integrated circuits and algorithm.